Samsungs flash memory is fabricated using an excellent 3d v nand architecture which stacks 32 cell layers on top of one another rather than trying to decrease the cells length and width to fit todays shrinking form factors the result is higher density and higher performance using a smaller footprint and a breakthrough in overcoming the density limits of conventional planar nand architecture the result enhanced performance lower power consumption with an up to 1 gb lpddr2 dram cache memo